Variable word length circuit of semiconductor memory

Details Variable word length circuit of semiconductor memory Variable word length circuit of semiconductor memory

1988-06-14

1989-12-26

Hecker, Stuart N.

Static information storage and retrieval

Recirculation stores

36518912, 365240, 365 75, 365 78, G11C 2100, G11C 1900, G11C 800

Patent

active

048902616

ABSTRACT:
A word length variable circuit of a semiconductor memory comprises a shift register provided corresponding to rows or columns of a memory cell array. The input of the first stage of the shift register is connected to the output of the last stage and regions of the shift register is grouped to form a fixed recirculation path. The word length can be varied by modifying stored data in the shift register without changing its recirculation path.

REFERENCES:
patent: 4429375 (1984-01-01), Kobayashi et al.
patent: 4648077 (1987-05-01), Pinkham et al.
patent: 4677594 (1987-06-01), Bisotto et al.
patent: 4796225 (1989-01-01), Benkara et al.

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