Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1994-04-18

1996-01-30

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257437, 257640, 257649, H01L 2712

Patent

active

054882460

ABSTRACT:
A semiconductor device and method of manufacturing the same includes the steps of forming silicon nitride films including much silicon than a stoichiometric silicon nitride (Si.sub.3 N.sub.4) and which will be an anti-reflection film, forming a resist film on the plasma silicon nitride films and, and concurrently patterning plasma silicon nitride films and conductive layers and using the resist film as a mask. As a result, high integration of the semiconductor device can be attained.

REFERENCES:
patent: 5177581 (1993-01-01), Kubo et al.
patent: 5331191 (1994-07-01), Sugiura et al.
Solid State Technology in Japanese, Jan. 1992 p. 17.
Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials, Makuhari, 1993, pp. 570-572, Aug. 1993.
SPIE vol. 1674 Optical/Laser Microlithography V (Mar. 1991), pp. 350-361.

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