Apparatus for ion implantation

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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A21K 2702, H01J 3708

Patent

active

045874328

ABSTRACT:
An ion implantation system in which surfaces of ion flight tube and drift tube perpendicular to ion dispersion plane have geometric configuration which precludes sputtering of contaminants onto path through resolving slit.

REFERENCES:
patent: 4433247 (1984-02-01), Turner
"A Satellite-Borne Ion Mass Spectrometer for the Energy Range 0 to 16 Kev", Balsiger et al., Space Sci. Ins., vol. 2, No. 4, pp. 499-521, Sep. 1976.

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