Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1984-08-03
1986-05-06
Anderson, Bruce C.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
A21K 2702, H01J 3708
Patent
active
045874328
ABSTRACT:
An ion implantation system in which surfaces of ion flight tube and drift tube perpendicular to ion dispersion plane have geometric configuration which precludes sputtering of contaminants onto path through resolving slit.
REFERENCES:
patent: 4433247 (1984-02-01), Turner
"A Satellite-Borne Ion Mass Spectrometer for the Energy Range 0 to 16 Kev", Balsiger et al., Space Sci. Ins., vol. 2, No. 4, pp. 499-521, Sep. 1976.
Anderson Bruce C.
Applied Materials Inc.
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