Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-03-22
1997-11-18
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257341, 257763, 257766, H01L 2976, H01L 2994, H01L 2348, H01L 2352
Patent
active
056891300
ABSTRACT:
A semiconductor device including an N-type semiconductor substrate which includes arsenic as an impurity, a first electrode formed on a main surface of the N-type semiconductor substrate, a ground surface formed on another surface of the N-type semiconductor substrate, a second electrode formed on the ground surface and ohmically-contacted with the N-type semiconductor substrate, a semiconductor element formed in the N-type semiconductor substrate and flowing current between the first electrode and the second electrode during ON-state thereof. The device has a reduced ON-resistance thereof.
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Kuroyanagi Akira
Okabe Yoshifumi
Yamaoka Masami
Loke Steven H.
Nippondenso Co. Ltd.
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