Static information storage and retrieval – Floating gate – Particular biasing
Patent
1996-01-11
1997-07-22
Dinh, Son T.
Static information storage and retrieval
Floating gate
Particular biasing
3651853, 365218, G11C 700
Patent
active
056509650
ABSTRACT:
A method of erasing memory cells in a sector of a flash programmable memory device, the sector having a plurality of word lines and a plurality of memory cells along each of the word lines, each of the cells in the sector having a source region common to all cells in the sector, the method comprising a first step of erasing the memory cells in the sector simultaneously, then reading a first cell along a first word line to determine if the first cell is under-erased. Responsive to the first cell being erased, a second cell along the first word line is read to determine if the second cell is under-erased. Responsive to the second cell being under-erased, a negative first voltage is applied to the first word line, a positive second voltage is applied to the common source of the cells in the sector, and a positive third voltage is applied to the plurality of word lines except the first word line.
REFERENCES:
patent: 4279024 (1981-07-01), Schrenk
patent: 4805151 (1989-02-01), Terada et al.
patent: 5163021 (1992-11-01), Mehrotra et al.
patent: 5233562 (1993-08-01), Ong et al.
patent: 5237535 (1993-08-01), Miekle et al.
patent: 5268870 (1993-12-01), Harari
patent: 5272669 (1993-12-01), Samachisa et al.
patent: 5335198 (1994-08-01), Van Buskirk et al.
patent: 5424993 (1995-06-01), Lee et al.
Dinh Son T.
Micro)n Technology, Inc.
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