Memory device having virtual ground line

Details Memory device having virtual ground line Memory device having virtual ground line

1995-10-10

1997-07-22

Zarabian, A.

Static information storage and retrieval

Systems using particular element

Semiconductive

365203, G11C 1134

Patent

active

056509596

ABSTRACT:
This memory device includes a plurality of word lines, a plurality of bit lines, a plurality of virtual ground lines, memory cells arranged at the intersections between the word and bit lines, a potential setting unit for setting the potential of the virtual ground lines to a ground or bias level, and a sense amplifier for detecting storage information of a target memory cell through the bit line when the virtual ground line connected to the target memory cell is set to the ground level by the potential setting unit. To read out information from a memory cell Mij, a virtual ground line GLi connected to the electrode of this memory cell is set to the ground level, and the remaining virtual ground lines are connected to a common bias potential line set to the bias level.

REFERENCES:
patent: 4805143 (1989-02-01), Matsumoto et al.
patent: 4847808 (1989-07-01), Kobatake
patent: 4868790 (1989-09-01), Wilmoth
patent: 5020026 (1991-05-01), Schreck
patent: 5022008 (1991-06-01), Schreck
patent: 5132933 (1992-07-01), Schreck
patent: 5163021 (1992-11-01), Mehrotra
patent: 5202848 (1993-04-01), Nakagawara

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