Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1996-10-15
1997-11-18
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419215, 427127, 427131, C23C 1434
Patent
active
056883803
ABSTRACT:
A giant magnetoresistive material film includes at least two ferromagnetic layers of a NiFe alloy or NiFeCo alloy, which are formed on a substrate through a nonmagnetic layer of Au, Ag, Cu or Cr, wherein magnetization of at lest one of the ferromagnetic layers is pinned by a coercive force increasing layer of .alpha.-Fe.sub.2 O.sub.3 provided adjacent thereto and having a thickness of 200 to 1000 .ANG. so as to increase coercive force of the ferromagnetic layer, and the other ferromagnetic layer has free magnetization so as to produce a change in resistance at a low magnetic field. The present invention also provides a method of producing the giant magnetoresistive material film and a magnetic head provided with the giant magnetoresistive material film.
REFERENCES:
patent: 3908194 (1975-09-01), Romankiw
patent: 4103315 (1978-07-01), Hempstead et al.
patent: 5159513 (1992-10-01), Dieny et al.
patent: 5373238 (1994-12-01), McGuire et al.
patent: 5408377 (1995-04-01), Gurney et al.
patent: 5422571 (1995-06-01), Gurney et al.
patent: 5465185 (1995-11-01), Heim et al.
patent: 5528440 (1996-06-01), Fontana et al.
patent: 5546253 (1996-08-01), Che
Hasegawa Naoya
Koike Fumihito
Alps Electric Co. ,Ltd.
Bever Patrick T.
Nguyen Nam
Shoup Guy W.
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