Plasma etching of silicon using fluorinated gas mixtures

Details Plasma etching of silicon using fluorinated gas mixtures Plasma etching of silicon using fluorinated gas mixtures

1985-08-23

1987-05-19

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156657, 1566591, 156662, 20419237, 252 791, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

046665552

ABSTRACT:
A method of plasma etching silicon using a fluorinated gas mixture. A mixture of CHF3 and SF6 is utilized in an etch chamber to form a plasma for etching silicon. The degree of anisotropy of the etch can be controlled by changing the percentage of CHF3 in the CHF3/SF6 mixture. The method does not adversely affect the etched surface so that no post-etch thermal process step is required to cure the silicon surface.

REFERENCES:
patent: 4601782 (1986-07-01), Bianchi et al.
E. C. Whitcomb, Selective, Anisotropic, Etching of SiO.sub.2 and PSG in a CHF.sub.3 /SF.sub.6, RIE Plasma, Conference: Electrochemical Society Inc., Spring Meeting, May 9-14, 1982, Montreal, Canada, Abstract No. 211, pp. 339-340.

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