Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-11-12
1994-03-08
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257379, 338225D, H01L 2978
Patent
active
052930580
ABSTRACT:
The channel resistance of a MOSFET is made independent of V.sub.S -V.sub.D by maintaining the ends of the gate electrode adjacent the source and drain regions at an offset voltage with respect to the source and drain regions, respectively, and by maintaining the portions of the body region adjacent to the source and drain regions at another offset voltage with respect to the source and drain regions, respectively. In this manner, V.sub.S -V.sub.D appears across the channel, across the gate, and across the body region beneath the channel. The resulting linear voltage drops along each of the three causes the channel-to-gate and channel-to-body potentials to be constant along the entire length of the channel, thereby avoiding variations in the number of carriers, mobility variations and body effect in the channel.
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Crane Sara W.
The Trustees of Columbia University
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