Method of fabricating single crown, extendible to triple crown,

Details Method of fabricating single crown, extendible to triple crown, Method of fabricating single crown, extendible to triple crown,

1996-09-09

1997-10-14

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437193, 437200, 437919, H01L 218242

Patent

active

056772270

ABSTRACT:
A process for creating a stacked capacitor, dynamic random access memory device, featuring increased capacitor surface area, resulting from a polysilicon, triple crown shaped, lower electrode structure, and also featuring self-alignment of the stacked capacitor contact structure, to a bit line contact structure, has been developed. The triple crown shaped, lower electrode structure is comprised of polysilicon spacers, formed via use of polysilicon and silicon oxide, low pressure chemical deposition, and anisotropic RIE, procedures.

REFERENCES:
patent: 5185282 (1993-02-01), Lee et al.
patent: 5278091 (1994-01-01), Fazan et al.
patent: 5476806 (1995-12-01), Roh et al.
patent: 5491103 (1996-02-01), Ahn et al.
patent: 5620918 (1997-04-01), Kondoh

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