Lightly doped drain transistor device having the polysilicon sid

Details Lightly doped drain transistor device having the polysilicon sid Lightly doped drain transistor device having the polysilicon sid

1994-12-19

1995-09-26

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257408, 257330, 257900, H01L 2978

Patent

active

054536359

ABSTRACT:
A lightly doped drain (LDD) transistor device structure and a method of fabricating same are described. A silicon substrate is provided which has a trench formed therein. Polysilicon sidewall spacers are formed on the side walls of the trench. Silicon dioxide sidewall spacers are formed on the side walls of the polysilicon sidewall spacers. A gate oxide layer is formed on the bottom of the trench by oxidation. A polysilicon gate layer is formed filling the trench. Impurities are implanted into the silicon substrate to simultaneously form heavily doped source/drain areas in spaced apart portions of the silicon substrate adjacent to the polysilicon sidewall spacers to improve the conductivity of the polysilicon gate layer, and form lightly doped source/drain areas in spaced apart portions of the silicon substrate under the silicon dioxide sidewall spacers.

REFERENCES:
patent: 5386133 (1995-01-01), Hiroki et al.

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