FET structure for use in narrow bandgap semiconductors

Details FET structure for use in narrow bandgap semiconductors FET structure for use in narrow bandgap semiconductors

1991-01-28

1993-12-28

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257127, 257170, 257488, 437 40, 437 45, H01L 2978, H01L 21265

Patent

active

052742636

ABSTRACT:
A FET structure for use in narrow bandgap semiconductors comprising a narrow bandgap semiconductor substrate 24, an implanted source region 12 of a conductivity type opposite that of the substrate 24, an implanted drain region 12 of the same conductivity type as source region 12 and spaced from source region 12, a first diode guard ring 14 insulatively disposed on the substrate 24 and surrounding source region 12, a second diode guard ring 14 insulatively disposed on the substrate 24 and surrounding drain region 12, a gate region 16 insulatively disposed on the substrate 24 and surrounding the source and drain regions 12 and the first and second diode guard rings 14, an outer periphery transistor guard ring 18 insulatively disposed on the substrate 24 and surrounding the gate region 16 and a field plate region 20 insulatively disposed on the substrate 24 and surrounding the outer periphery transistor guard ring 18.
Other devices, systems and methods are also disclosed.

REFERENCES:
patent: 4308549 (1981-12-01), Yeh
patent: 4751560 (1988-06-01), Rosbeck
patent: 4947222 (1990-08-01), Gill et al.

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