Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-07-24
1998-04-07
Martin Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257 31, 257 43, 257310, 365 43, 365 65, 365145, H01L 2906, H01L 2912, H01L 2976
Patent
active
057367590
ABSTRACT:
A fatigue resistent ferroelectric element having a ferroelectric body, and regions of enhanced oxide ion mobility on opposite sides of the body to which are attached electrodes. In one embodiment, an element made from the known ferroelectric material PZT is treated at each of two surfaces where the electrodes are to be attached with a fast ion conductor, such as doped yttria stabilized zirconia. In another embodiment, a ferroelectric element constructed essentially of strontium tantalite (SrTaO.sub.6) has each of its surfaces where electrodes are to be attached treated with bismuth oxide (Bi.sub.2 O.sub.3) that is then diffused into surface regions of the element during an annealing process.
REFERENCES:
patent: 4786837 (1988-11-01), Kalnin et al.
patent: 5247189 (1993-09-01), Tanaka et al.
patent: 5519234 (1996-05-01), Paz de Araujo et al.
patent: 5578867 (1996-11-01), Argos, Jr. et al.
Brosemer Jeffery J.
Martin Wallace Valencia
NEC Research Institute Inc.
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