Distributed negative gate power supply

Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator

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Details

365185, 365218, 365226, 365900, G11C 1300

Patent

active

054065178

ABSTRACT:
A distributed negative gate power supply for generating and selectively supplying a relatively high negative voltage to control gates of memory cells in selected half-sectors via wordlines in an array of flash EEPROM memory cells during flash erasure. The distributed negative gate power supply includes a main charge pumping circuit (20a, 20b), a plurality of distribution sector pumping means (18a-18p). Each of the plurality of distribution sector pumping circuits is responsive to a half-sector select signal for selectively connecting the primary negative voltage to the wordlines of the selected half-sectors.

REFERENCES:
patent: 5077691 (1991-12-01), Haddad et al.
patent: 5168466 (1992-12-01), Kuo et al.
patent: 5282170 (1994-01-01), Van Buskirk et al.

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