Method of making asymmetrical field effect transistor

Details Method of making asymmetrical field effect transistor Method of making asymmetrical field effect transistor

1989-11-27

1991-07-30

Hille, Rolf

Fishing, trapping, and vermin destroying

437 39, 437175, 437913, 437912, 437983, 437984, 357 232, 357 239, 357 22, H01L 21265, H01L 2144, H01L 2922, H01L 2978

Patent

active

050360175

ABSTRACT:
A method of making a field effect transistor includes forming an active layer in a semiconductor substrate, forming a gate material on a portion of the surface as an ion implantation mask, implanting dopant ions to form a source region, depositing a first mask over the source region and a portion of the gate material, and removing the unmasked gate material to define a gate electrode. A second mask is deposited adjacent the gate electrode opposite the source region, and dopant impurities are implanted to form a drain region using the mask. The source and drain regions are asymmetrically doped and the gate electrode is asymmetrically disposed relative to the source and drain regions in the self-aligning process.

REFERENCES:
patent: 4532698 (1985-08-01), Fang et al.
patent: 4645563 (1987-02-01), Terada
patent: 4700455 (1987-10-01), Shimada et al.
patent: 4701422 (1987-10-01), Elliott
patent: 4769339 (1988-09-01), Ishii
patent: 4839304 (1989-06-01), Morikawa
patent: 4902646 (1990-02-01), Kakano
"Asymmetric Implantation Self-Alignment Technique for GaAs MESFETs", Kimura et al, Jap. J. Appl. Phys., vol. 27, #7, Jul. 1988, pp. L1340-L1343.

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