Vapor phase growth method of forming film in process of manufact

Details Vapor phase growth method of forming film in process of manufact Vapor phase growth method of forming film in process of manufact

1992-07-23

1993-12-28

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437133, 437942, 437129, 437 31, H01L 2120

Patent

active

052739333

ABSTRACT:
In a process of manufacturing a short-wavelength-light emitting element, n- and p-type GaInAlN films are formed on a substrate made of SiC, using an MOCVD method. (CH.sub.3).sub.3 SiN.sub.3 is used as raw material for nitrogen. The films are grown at a relatively low temperature and the amount of nitrogen doped in the films is increased.

REFERENCES:
patent: 4569855 (1986-02-01), Matsuda et al.
Extended Abstracts (The 38th Spring Meeting, 1991); The Japan Society of Applied Physics and Related Societies 29p-V-13; R. Ishihara et al. "Low Temperature CVD of SiN using new source gas (Hydrogen Azide)" (date unknown).
Journal of Crystal Growth 107 (1991) 376-380; K. L. Ho et al., "MOVPE of AlN and GaN by using novel precursors".

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