Process for growing compound semiconductor monocrystal

Details Process for growing compound semiconductor monocrystal Process for growing compound semiconductor monocrystal

1990-07-19

1991-07-30

Pal, Asok

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156614, 156610, 156DIG70, 156DIG20, 118715, C30B 2502

Patent

active

050357670

ABSTRACT:
This invention relates to an improvement in a reduced gaseous phase growing method for compound semiconductor monocrystal formed from a plurality of elements such as GaAs.
A gas of compound containing each of constitutional elements is introduced into a reduced reaction pipe of which temperature distribution is controlled, without use of H.sub.2 or He as a carrier gas. Thereby it is possible to control the amount of introduction of each of the elements of the compound semiconductor subjected to epitaxial growth.
In addition, the temperature distribution within the reaction pipe is controlled and the temperature of the crystal substrate is maintained at a relatively low temperature to improve the quality of the growing crystal.

REFERENCES:
patent: 4010045 (1977-03-01), Ruehwein
patent: 4250205 (1981-02-01), Constant et al.
patent: 4368098 (1983-01-01), Manasevit
Article: A New Low Temperature III-V Multilayer Growth Technique: Vacuum Metalorganic Chemical Vapor Deposition.
Journal: Epitaxial Growth of GaAs by Low-Pressure MOCVD.
Nishizawa et al., J. Electrochemical Society, vol. 135(7), p. 1813 (1988).
Nishizawa et al., J. Crystal Growth, vol. 17, pp. 241-248 (1972).
Nishizawa et al., J. Crystal Growth, vol. 74, pp. 331-337 (1986).
Nishizawa et al., J. Crystal Growth, 24/25, pp. 215-219 (1974).

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