Semiconductor Bi-MIS device and method of manufacturing the same

Details Semiconductor Bi-MIS device and method of manufacturing the same Semiconductor Bi-MIS device and method of manufacturing the same

1993-06-15

1995-04-11

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 257324, 257370, 257555, 257627, 257441, H01L 2702, H01L 2968, H01L 2704

Patent

active

054061067

ABSTRACT:
A silicon oxide film as a dielectric film and a silicon nitride film or a polysilicon film as a protection film for the silicon oxide film are formed on a silicon substrate. After the two films are selectively etched to form contact holes of a bipolar transistor, a polysilicon film as a conductive film is laid on the entire substrate and selectively etched to form electrodes. In a MIS transistor, the protection film of the silicon nitride film serves as a gate insulator film and the protection film of the polysilicon film serves as a gate electrode. Accordingly, contamination to the gate insulator film at formation of contact holes of the bipolar transistor is prevented, and an excellent semiconductor with Bi-MOS structure is manufactured with low cost.

REFERENCES:
patent: 4247861 (1981-01-01), Hsu et al.
patent: 4484388 (1984-11-01), Iwasaki
patent: 5005066 (1991-04-01), Chen

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