Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-01-14
1995-04-11
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257335, 257343, 257350, 257381, 257401, H01L 2910, H01L 2701, H01L 2702, H01L 2978
Patent
active
054061040
ABSTRACT:
A transistor circuit such as an integrated circuit contains at least first and second MOS transistors having drain electrode pair and source electrode pair, one of which is a pair of electrodes connected together and integrated into a common drain or source electrode, and the other of which is a pair of separate electrodes. In a semiconductor substrate, there are formed at least one common region, such as a drain contact region or a source region, connected with the common electrode, and a plurality of first and second individual regions selectively connected with the separate electrodes. Around the common region or each common region, a predetermined number of the individual regions are arranged in such a manner as to improve the thermal balance of the substrate and enable the downsizing of the device.
REFERENCES:
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patent: 5105252 (1992-04-01), Kim et al.
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Seibundoshinkoska, "Denshi Kairo Dai Jiten", chapter 52, p. 407.
Ohmu Sha, Handotai Handbook (2nd edition), vol. 6, chapter 2, p. 413.
Hirota Masaki
Mihara Teruyoshi
Crane Sara W.
Martin Wallace Valencia
Nissan Motor Co,. Ltd.
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