High breakdown voltage semiconductor device

Details High breakdown voltage semiconductor device High breakdown voltage semiconductor device

1991-08-30

1994-03-15

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

257492, 257493, 257500, H01L 2974

Patent

active

052948250

ABSTRACT:
A high breakdown voltage semiconductor device is disclosed which comprises a semiconductor substrate, an insulating layer formed on the semiconductor substrate, a first semiconductor region formed on the first insulating layer and isolated at its side by an isolating region, a second semiconductor region of a first conductivity type formed in a surface portion of the first semiconductor region and having a higher impurity concentration than that of the first semiconductor region, a third semiconductor region of a second conductivity type formed in the surface region of the first semiconductor region such that it is located between the second semiconductor region and the isolating region in a manner to be spaced apart from the second semiconductor region, the third semiconductor region having a higher impurity concentration than that of the first semiconductor region.

REFERENCES:
patent: 4371886 (1983-02-01), Hartman
patent: 4807012 (1989-02-01), Beasom
patent: 5072287 (1991-12-01), Nakagawa et al.

Affiliated with

Also associated with

Rating

High breakdown voltage semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High breakdown voltage semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High breakdown voltage semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1537874