Polycide local interconnect method and structure

Details Polycide local interconnect method and structure Polycide local interconnect method and structure

1993-03-17

1994-03-15

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257369, 257377, 257382, 257755, H01L 2701, H01L 2702, H01L 2904, H01L 2348

Patent

active

052948226

ABSTRACT:
A local interconnect comprises a doped, silicided amorphous or polysilicon layer 28. One interconnect 34, 35 extends between an isolated gate contact 60 and a source and drain 61 of an NMOS transistor 42. Another local interconnect 34,37 extends between a source and a drain 62, 63 of CMOS transistors.

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