Thin-film SOI semiconductor device having heavily doped diffusio

Details Thin-film SOI semiconductor device having heavily doped diffusio Thin-film SOI semiconductor device having heavily doped diffusio

1991-10-08

1994-03-15

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257347, 257350, 257352, 257369, H01L 2701, H01L 2712, H01L 2976

Patent

active

052948218

ABSTRACT:
Thin-film SOI semiconductor devices formed in a thin film Si semiconductor substrate layer formed on an insulating layer on a semiconductor substrate have improved electrical characteristics and reliable reproducibility of those characteristics in the mass production, which are obtained by utilizing semiconductor substrate having high concentrations of active impurities, or by utilizing voltage biased, impurity diffusion regions in the surface of the semiconductor substrate aligned beneath CMOS FETs formed in the thin film Si layer. They can also be obtained by extension of the semiconductor substrate through the insulating film to the channel region of the CMOS FETs formed in a thin film Si regions. Further, reliably reproducible contact connection of electrodes to buried thin film Si layers is also achieved.

REFERENCES:
patent: 4716128 (1987-12-01), Schubert et al.
patent: 4763183 (1988-08-01), Ng et al.
patent: 4884116 (1989-11-01), Shirai
patent: 4902637 (1990-02-01), Kondou et al.
patent: 4907047 (1990-03-01), Kato et al.
patent: 4965872 (1990-10-01), Vasudev
patent: 4966864 (1990-10-01), Pfiester
patent: 4974041 (1990-11-01), Grinberg
patent: 4996575 (1991-02-01), Ipri et al.
patent: 5021843 (1991-06-01), Ohmi
patent: 5103277 (1992-04-01), Caviglia et al.
patent: 5191397 (1993-03-01), Yoshida
Japanese Journal of Applied Physics, vol. 29, No. 4, part 2, Apr. 1990, Tokyo, Japan; K. Ishii et al.: "Experimental Fabrication of XMOS Transistors Using Lateral Solid-Phase Epitaxy of CVD Silicon Films".
Applied Physics Letters, vol. 55, No. 24, Dec. 11th, 1989, pp. 2544-2546, New York, U.S.; D. Pribat, et al.: "Conformal Vapor Phase Epitaxy".
IBM Technical Disclosure Bulletin, vol. 24, No. 11A, Apr. 1982, pp. 5563-5566, New York, U.S.; C. G. Jambotkar: "Enhancing the Performance of Bipolar Transistors".
IBM Technical Disclosure Bulletin, vol. 24, No. 7A, Dec. 1981, pp. 3454-3457, New York, U.S.; F. H. De La Moneda: "Self-Aligned Silicide Buried Contacts".

Affiliated with

Also associated with

Rating

Thin-film SOI semiconductor device having heavily doped diffusio does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin-film SOI semiconductor device having heavily doped diffusio, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin-film SOI semiconductor device having heavily doped diffusio will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1537826