Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1996-03-11
1998-04-28
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 349 29, 349110, 349111, H01L 2904, H01L 31036
Patent
active
057448213
ABSTRACT:
The present invention relates to a thin film transistor-liquid crystal display and a manufacturing method of the same, which allows for repair of opened data lines and prevents shorts between adjacent gate electrodes. An opaque conductive material is deposited on a transparent substrate and patterned to form black matrices. The black matrix formed in each pixel unit is separated from other black matrix units, although, adjacent black matrices may connect through bridges in a column direction. Since the black matrix overlaps portion of the data line, and a portion of the gate line, this overlapped structure prevents backlight and also allows for a laser repair of opened data lines.
Abraham Fetsum
Samsung Electronics Co,. Ltd.
Thomas Tom
LandOfFree
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