Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Patent
1995-09-28
1997-06-24
Nguyen, Viet Q.
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
365204, 36518911, 365203, 36523006, G11C 11413
Patent
active
056423152
ABSTRACT:
A static type of semiconductor memory device includes a power supply line for supplying a power supply voltage, a pair of bit lines, a word line, and a memory cell connected to the word line and the pair of bit lines. The power supply voltage is boosted up to provide the boosted voltage on a boosted voltage line. A predetermined voltage is supplied to the word line using the boosted voltage and a write operation or read operation is performed to the memory cell via the pair of bit lines when the predetermined voltage is supplied on the word line. The predetermined voltage is approximately equal to a sum of the power supply voltage and a threshold voltage of a MOS transistor, resulting in a great low voltage operation margin.
REFERENCES:
patent: 5103113 (1992-04-01), Inui et al.
patent: 5115412 (1992-05-01), Tobita
patent: 5467306 (1995-11-01), Kaya et al.
patent: 5510749 (1996-04-01), Arimoto
patent: 5524095 (1996-06-01), Someya et al.
"A Boost Circuit for Low Supply Voltage" Kozaru et al; Proc. of the 1993 IEICE Spring Conference, C-622; p. 5-252.
NEC Corporation
Nguyen Viet Q.
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