Semiconductor device and method of manufacturing a semiconductor

Details Semiconductor device and method of manufacturing a semiconductor Semiconductor device and method of manufacturing a semiconductor

1989-12-12

1991-08-13

James, Andrew J.

357 68, 357 65, 357 67, H01L 2348, H01L 2946, H01L 2954, H01L 2962

Patent

active

050400495

ABSTRACT:
The invention relates to a semiconductor device comprising a silicon body (1) provided with a conductor pattern (4, 5) consisting of a contact layer (4) and an aluminium layer (5). Contact layers (4), such as those of hafnium, titanium and zirconium, are reactive when they are in contact both with silicon and with aluminum. The silicon body (1) is contacted with a conductor pattern (2, 3), which forms a barrier with respect to silicon migration and the conductor pattern (2, 3) is contacted with the aforementioned conductor pattern (4, 5).

REFERENCES:
patent: 4502210 (1985-03-01), Okumura et al.
patent: 4871617 (1989-10-01), Kim et al.
patent: 4897709 (1990-01-01), Yokoyama et al.

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