Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

1996-11-12

1998-04-28

Breneman, R. Bruce

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

216 66, 216 67, 438694, 438720, C23C 1432

Patent

active

057440123

ABSTRACT:
A method for fabricating a semiconductor device wherein a plasma reaction is used to dry etch a film, comprising injection of anions onto the film to neutralize cations remaining on the film after the plasma etch, whereby the reliability in highly integrated semiconductor devices can be secured.

REFERENCES:
patent: 4463255 (1984-07-01), Robertson et al.
patent: 4639301 (1987-01-01), Doherty et al.
patent: 4976843 (1990-12-01), Ward et al.

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