Method for reading data in a memory cell

Details Method for reading data in a memory cell Method for reading data in a memory cell

1997-05-23

1999-01-12

An, Meng-Ai T.

Electrical computers and digital processing systems: memory

Storage accessing and control

Specific memory composition

711106, 36518901, 36518907, 36518521, 36518513, 36518525, 365203, 365204, G06F 1200

Patent

active

058600841

ABSTRACT:
A method of reading a memory cell containing an access transistor, a word line and a memory storage for holding information. The access transistor having a control terminal is connected to the word line. The memory storage is connected to the access transistor and thereby to a sense amplifier through a bit line. The access transistor, operating in a conductive state, is responsive to the word line. The bit line is precharged to an intermediate voltage level greater than a low threshold level and less than an upper limit level. The bit line is discharged from the intermediate voltage level to produce a low voltage level in a prescribed time if the memory storage holds memory information of a first state. The bit line is charged to approximately the upper limit level in the prescribed time if the memory storage holds memory information of a second state. The voltage of the bit line is determined by the sense amplifier after the prescribed time so that the memory information is read.

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