Plasma enhanced CVD process for fluorinated silicon nitride film

Details Plasma enhanced CVD process for fluorinated silicon nitride film Plasma enhanced CVD process for fluorinated silicon nitride film

1991-12-24

1993-04-20

Beck, Shrive

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

4272552, 4272551, B05D 306, C23C 1600

Patent

active

052041387

ABSTRACT:
A plasma enhanced chemical vapor deposition process for producing a fluorinated silicon nitride layer on a substrate is disclosed. The process utilizes a mixture of silane, perfluorosilane and nitrogen to produce films of high conformality and stability. The silane and perfluorosilane in the mixture are in a ratio of 0.05 to 1 on a volume basis. The preferred silane is SiH.sub.4 and the preferred perfluorosilane is SiF.sub.4.

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Chang et al., "Fluorinated Chemistry for High-Quality, Low Hydrogen Plasma-Deposited Silicon Nitride Films", J. Appl. Phys. 62(4), Aug. 1987, pp. 1406-1415.
Shibagaki, et al.; Low Temperature Silicon Nitride Deposition Using Microwave-Excited Active Nitrogen; 1977, Japanese Journal of Applied Physics, vol. 17 (1978) Supplement 17-1, pp. 215-221.

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