Synchronous semiconductor memory device

Static information storage and retrieval – Interconnection arrangements

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

365 51, 365149, G11C 506

Patent

active

058597930

ABSTRACT:
A synchronous semiconductor memory device which prevents to misread due to the parasitic capacitance is disclosed. A synchronous semiconductor memory device of the present invention comprises memory cells for storing data therein, sense amplifiers coupled to the memory cells and pairs of data lines coupled to the sense amplifiers. The data lines extend to one direction so that the data lines are substantially parallel to each other. The pairs of data lines include first pairs of data lines and second pairs of data lines located between the first pairs of data lines. Each of the second pairs has a cross point at which each of the data lines of the pair crosses each other.

REFERENCES:
patent: 4751680 (1988-06-01), Wang et al.
patent: 4984197 (1991-01-01), Sakagami
patent: 5276649 (1994-01-01), Hoshita et al.
patent: 5367492 (1994-11-01), Kawamoto et al.
patent: 5487043 (1996-01-01), Furutani et al.
patent: 5615156 (1997-03-01), Yoshida et al.
patent: 5684736 (1997-11-01), Chan

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Synchronous semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Synchronous semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Synchronous semiconductor memory device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1521806

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.