Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1996-09-27
1999-09-14
Brown, Peter Toby
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438158, 438162, 438166, 438301, 438487, 438753, 438949, H01L 2100
Patent
active
059535954
ABSTRACT:
The manufacturing processes can be simplified and the reliability can be improved. A method of processing a thin film includes a first process of selectively forming a resist pattern on a ground surface, a second process of forming a thin film on the ground surface and a surface of the resist pattern, and a third process of removing the resist pattern to selectively remove the thin film deposited on the former, i.e., carrying out the lift-off, thereby the thin film process for a desired pattern being carried out.
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Patent Abstracts of Japan, vol. 7, No. 229 (E-203), Dec. 10, 1983, and JP58119669, (Suwa Seikosha KK), Jul. 16, 1983.
Proceedings of the SID, vol. 30, No. 2, Jan. 1, 1989, pp. 143-146, XP000114037, Yuki M et al, "A Full-Color LCD Addressed by Poly-Si TFT's Fabricated Below 450.degree.C".
Gosain Dharam Pal
Nakagoe Miyako
Usui Setsuo
Westwater Jonathan
Brown Peter Toby
Duong Khanh
Sony Corporation
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