Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-06-19
1999-01-12
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257296, 257301, 257304, 257305, 257311, 257411, H01L 27108, H01L 2976, H01L 2994
Patent
active
058594515
ABSTRACT:
A memory cell comprising a MOSFET formed on a principle surface of a semiconductor substrate and an information storage capacitor having a storage electrode formed in or on the substrate so as to contact with a drain region of the MOSFET, and a capacitor electrode formed adjacent to the storage electrode with a capacitor insulator film being sandwiched between the storage electrode and the capacitor electrode. The storage electrode is connected to the drain region of the MOSFET through a thin barrier layer which is formed between the drain region and the storage electrode region so as to prevent impurities in the storage electrode from being diffused into the drain region.
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Solar Cells, vol. 27, Nos. 1-4, Oct.-Dec. 1989, pp. 177-189, M.-A. Nicolet et al., "Issues in Metal/Semiconductor Contact Design and Implementation", pp. 180, 181.
Crane Sara W.
NEC Corporation
Wallace Valencia M.
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