Nonvolatile memory device having an improved integration and red

Details Nonvolatile memory device having an improved integration and red Nonvolatile memory device having an improved integration and red

1996-03-13

1998-11-10

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257314, 257549, 257550, H01L 2976, H01L 29788, H01L 3100

Patent

active

058348077

ABSTRACT:
In a nonvolatile memory device and manufacturing method, the device includes cell transistors having sources and drains shared by cell transistors adjacent in a first direction, a floating gate confined to the respective cell transistors, and a control gate shared by cell transistors adjacent in a second direction, first plugged conductive layers formed in a long rod shape in the second direction so that sources of cell transistors adjacent in the second direction are connected with one another, second plugged conductive layers each connected with drains of the respective cell transistors, a common source line formed in a long rod shape in the second direction so as to be connected with the first plugged conductive layers thereon, a pad layer formed so as to be confined to the respective cell transistors on the second plugged conductive layers, and a bit line connected with the pad layer through a contact hole. Therefore, the improvement of integration of a memory device can be easily attained.

REFERENCES:
patent: 5282160 (1994-01-01), Yamagata
patent: 5378909 (1995-01-01), Chang et al.
patent: 5414653 (1995-05-01), Onishi et al.
patent: 5519239 (1996-05-01), Chu

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