Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-11-06
1998-11-10
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257310, 428620, 501 12, H01L 2976
Patent
active
058348034
ABSTRACT:
An oriented ferroelectric thin film element, which comprises a single-crystal substrate having thereon (a) a first epitaxial or oriented ferroelectric thin film prepared by a gas phase growth method and (b) a second epitaxial or oriented ferroelectric thin film prepared by application of a coating solution of an organic metal compound to the first ferroelectric thin film followed by heating the coated material. The oriented ferroelectric thin film element has a smooth surface and is useful as an optical guide element, light modulation element, etc. The second ferroelectric thin film can be formed by repeating the process of application of a coating solution of an organic metal compound followed by heating the coated material several times. The present invention also discloses a process for preparing the oriented ferroelectric thin film element.
REFERENCES:
patent: 5011796 (1991-04-01), Bridger et al.
patent: 5206788 (1993-04-01), Larson et al.
patent: 5442585 (1995-08-01), Eguchi et al.
patent: 5567979 (1996-10-01), Nashimoto et al.
patent: 5645885 (1997-07-01), Nishimoto
patent: 5656382 (1997-08-01), Nashimoto
Nashimoto et al., "Epitaxial Growth of MgO on GaAs(001) for Growing Epitaxial BaTiO.sub.3 Thin Films by Pulsed Laser Deposition", Appl. Phys. Lett. 60 (10), Mar. 9, 1992, pp. 1199-1201.
Nashimoto et al., "Epitaxial LiNbO.sub.3 Thin Films Prepared by a sol-gel Process", Materials Letters, vol. 10, No. 7,8, Jan. 1991, pp. 348-354.
Crane Sara W.
Fuji 'Xerox Co., Ltd.
LandOfFree
Oriented ferroelectric thin film element and process for prepari does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Oriented ferroelectric thin film element and process for prepari, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Oriented ferroelectric thin film element and process for prepari will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1519064