Semiconductor memory device capable of storing plural-bit data i

Details Semiconductor memory device capable of storing plural-bit data i Semiconductor memory device capable of storing plural-bit data i

1998-08-14

1999-09-14

Nguyen, Viet Q.

Static information storage and retrieval

Read/write circuit

Accelerating charge or discharge

365203, 365205, 365196, 365207, G11C 700

Patent

active

059532742

ABSTRACT:
Each of memory cells has one MOS transistor including a drain region, a source region, a channel region and a gate electrode. An impurity-introducing area of the channel region is varied in the width direction of the channel region to store data of plural bits in the memory cell.

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"Mid-Level Current Generator Circuit", IBM Technical Disclosure Bulletin, vol. 33, No. 1B, Jun. 1990, pp. 386-388.

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