Manufacture of semiconductor device containing polycide electrod

Details Manufacture of semiconductor device containing polycide electrod Manufacture of semiconductor device containing polycide electrod

1996-08-29

1998-11-10

Chaudhuri, Olik

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438632, 438648, H01L 2144

Patent

active

058343709

ABSTRACT:
An element including a polycide electrode is formed on a silicon substrate, and after a BPSG film is deposited as an interlevel insulating film and a contact hole is formed therein, the substrate is lamp annealed in an atmosphere containing oxygen to reflow the BPSG film. After an HF process, an Al wiring is formed on the BPSG film, contacting the polycide electrode via the contact hole. It is possible to prevent an increase in the contact resistance of the polycide electrode.

REFERENCES:
patent: 4535528 (1985-08-01), Chen et al.
patent: 4585515 (1986-04-01), Maa
patent: 5322812 (1994-06-01), Dixit et al.
patent: 5364817 (1994-11-01), Lur et al.
patent: 5449640 (1995-09-01), Hunt et al.
patent: 5506177 (1996-04-01), Kishimoto et al.
patent: 5578522 (1996-11-01), Nakamura et al.

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