Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-08-19
1998-11-10
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438612, 438613, 438656, 438685, 438688, H01L 2144
Patent
active
058343660
ABSTRACT:
A method for forming an interconnect for making a temporary or permanent electrical connection to a semiconductor dice is provided. The method includes forming a substrate with an insulating layer and a pattern of conductors thereon. The conductors are formed as a bi-metal stack including a barrier layer formed of an inert metal and a conductive layer formed of a highly conductive metal. Microbumps are formed on the conductors by deposition through a mask using an electroplating, electroless plating, screen printing or evaporation process. The interconnect can be used to provide a temporary electrical connection for testing bare semiconductor dice. Alternately the interconnect can be used for flip chip mounting dice for fabricating multi chip modules and other electronic devices.
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Gratton Stephen A.
Micro)n Technology, Inc.
Niebling John F.
Zarneke David A.
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