Multi-layer structure for II-VI group compound semiconductor on

Details Multi-layer structure for II-VI group compound semiconductor on Multi-layer structure for II-VI group compound semiconductor on

1996-04-10

1998-11-10

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Implanting to form insulator

148 334, 148 335, 148DIG64, 148DIG169, 257 12, 257 78, 438509, H01L 21363, H01L 2922

Patent

active

058343610

ABSTRACT:
In a method of forming a II-VI compound semiconductor thin film on an InP substrate, a layer of III-V compound semiconductor mixed crystal is first formed on the InP substrate. The desorption rate of a group V element constituting the III-V compound semiconductor mixed crystal at a decomposition temperature of a native oxide layer formed on a surface of the III-V compound semiconductor mixed crystal layer is lower than a desorption rate of P of the InP substrate at a decomposition temperature of a native oxide layer formed on a surface of the InP substrate. A II-VI compound semiconductor thin film layer is formed on the first III-V compound semiconductor mixed crystal layer.

REFERENCES:
patent: 5254496 (1993-10-01), Briggs et al.
patent: 5273933 (1993-12-01), Hatano et al.
patent: 5284783 (1994-02-01), Ishikawa et al.
patent: 5372970 (1994-12-01), Kubo
S. Saito et al., Jpn. J. Appl. Phys. 33(5B)(1994)L705 "Surface preparation . . . MBE growth of ZnSe layers on InGaP layers", May 1994.
N. Dai et al., Appl. Phys. Lett. 66(20)(1995)2742 "MBE . . .ZnCdSe on InP substrates", May 1995.
D. Rioux et al., J. Electron Spectroscopy & Related Phenom. 68(1994)719 "Photoemission . . . barrier in ZnSe / InP (100) heterostructures", May 1994.
K. Lu et al., J. Cryst. Growth, 138(1994) 1 "(In,Ga)P buffer layers for ZnSe . . . ", 1994.
Y. Hishida et al., J. Cryst. Growth, 150(1995)828 "Reduction of p-ZnSe / p-GaAs . . . GaN buffer layer", 1995.
T. Morita et al.; "Molecular Beam Epitaxial Growth of MgZnCdSe on (100) InP Substrates"; Seventh International Conference on Indium Phosphide and Related Materials p. 805, 1995.
N. Kobayashi et al.; "As and P Desorption from III-V Semiconductor Surface in Metalorganic Chemical Vapor Deposition Studied by Surface Photo-Absorption"; Japanese Journal of Applied Physics, Vo. 30, No. 10A, Oct. 1991, (1991), pp. L1699-L1701.
J.W. Matthews et al.; "Defects in Epitaxial Multilayers"; Journal of Crystal Growth, vol. 27 (1974), pp. 118-125.

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