Light emitting device, wafer for light emitting device, and meth

Details Light emitting device, wafer for light emitting device, and meth Light emitting device, wafer for light emitting device, and meth

1997-05-28

1998-11-10

Niebling, John

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

438 29, 438 33, 438 46, 438796, 148DIG113, 257 13, H01L 2100

Patent

active

058343253

ABSTRACT:
A light emitting device having higher blue luminance is obtained. A gallium nitride compound layer is formed on a GaAs substrate, and thereafter the GaAs substrate is at least partially removed for forming the light emitting device. Due to the removal of the GaAs substrate, the quantity of light absorption is reduced as compared with the case of leaving the overall GaAs substrate. Thus, a light emitting device having high blue luminance is obtained.

REFERENCES:
patent: 5278433 (1994-01-01), Manabe et al.
patent: 5281830 (1994-01-01), Kotaki et al.
patent: 5369289 (1994-11-01), Tamaki et al.
patent: 5408120 (1995-04-01), Manabe et al.
patent: 5432808 (1995-07-01), Hatano et al.
patent: 5496766 (1996-03-01), Amano et al.
patent: 5578839 (1996-11-01), Nakamura et al.
patent: 5665986 (1997-09-01), Miura et al.

Affiliated with

Also associated with

Rating

Light emitting device, wafer for light emitting device, and meth does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Light emitting device, wafer for light emitting device, and meth, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Light emitting device, wafer for light emitting device, and meth will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1516005