Method of producing thin film

Details Method of producing thin film Method of producing thin film

1996-10-17

1999-01-12

Gupta, Yogendra N.

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

438694, 438906, H01L 2100

Patent

active

058588817

ABSTRACT:
A method of producing a high-purity and high-quality thin film, wherein chlorine trifluoride is used as a cleaning gas for the purpose of lowering temperature at which a cleaning operation is conducted, the cleaning operation is conducted at a temperature in the range of from room temperature to 500.degree. C., a member whose surface is made of silicon carbide is used and a combined content of free silicon and free carbon in the surface region of the member is in the range of 2 wt % or less so that corrosion of the member is prevented.

REFERENCES:
patent: 4842897 (1989-06-01), Takeuchi et al.
patent: 4985114 (1991-01-01), Okudaira et al.
patent: 5294262 (1994-03-01), Nishimura
patent: 5443686 (1995-08-01), Jones et al.

Affiliated with

Also associated with

Rating

Method of producing thin film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of producing thin film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing thin film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1515231