Method of fabricating semiconductor device having step of formin

Details Method of fabricating semiconductor device having step of formin Method of fabricating semiconductor device having step of formin

1997-04-10

1999-01-12

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438638, 438629, 438645, 438666, 438668, 438738, H01L 214763

Patent

active

058588744

ABSTRACT:
A method of fabricating a semiconductor device includes the steps of forming an inter-layer insulating film, forming a contact hole in the inter-layer insulating film, forming a thin conductive film filling the contact hole and covering the inter-layer insulating film, and forming a contact plug filling the contact hole by etching the thin conductive film and thus exposing the surface of the inter-layer insulating film. The etching is conducted such that, from the time when a surface of the inter-layer insulating film is about to be exposed, the thin conductive film and the inter-layer insulating film are etched under substantially the same etching speed. Plug loss in the contact hole is suppressed so that wiring breakage in the contact hole can be prevented.

REFERENCES:
patent: 4818725 (1989-04-01), Lichtel, Jr. et al.
patent: 5328553 (1994-07-01), Poon
patent: 5366930 (1994-11-01), Kim
patent: 5369054 (1994-11-01), Yen et al.
Wolf et al., vol. I, Silicon Processing for the VLSI Era, Lattice Press, 1986 pp. 539-565.

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