Silicon-on-insulator and CMOS-on-SOI double film structures

Details Silicon-on-insulator and CMOS-on-SOI double film structures Silicon-on-insulator and CMOS-on-SOI double film structures

Filed on

1997-03-05

Date issued

1999-09-14

Examiner

Abraham, Fetsum

Patent Class

Active solid-state devices (e.g., transistors, solid-state diode

SubClass

Field effect device

SubSubClass

Having insulated electrode

Other Related Categories

257348, 257349, 257350, 257351, 257352, 257359, 257367, 257360, 257590, 257752, H01L 21306

Type

Patent

Status

active

Patent number

059526955

Description

ABSTRACT:
Silicon is formed at selected locations on a silicon-on-insulator (SOI) substrate during fabrication of selected electronic components, including resistors, capacitors, and diodes. The silicon location is defined using a patterned, removable mask, and the silicon may be applied by deposition or growth and may take the form of polysilicon or crystalline silicon. Electrostatic discharge (ESD) characteristics of the SOI device is significantly improved by having a thick double layer of silicon in selected regions.

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