Semiconductor device made using processing from both sides of a

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257586, H01L 2701, H01L 2712, H01L 310392, H01L 27082

Patent

active

059526947

ABSTRACT:
A semiconductor device having a semiconductor layer formed on a substrate having an insulating surface, comprises a first region formed by processing the semiconductor layer from one major surface thereof, and a second region formed by processing the semiconductor layer from the other major surface, the first and second regions cooperating to constitute a semiconductor function element, isolation region or the like.

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