Semiconductor memory device having a trench capacitor with lower

Details Semiconductor memory device having a trench capacitor with lower Semiconductor memory device having a trench capacitor with lower

1997-07-08

1999-09-14

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257298, 257300, 257301, 257302, 257303, 257304, 257308, 257309, 257311, H01L 2968

Patent

active

059526874

ABSTRACT:
A semiconductor memory device having a semiconductor substrate, an insulating layer provided on the substrate, and a memory cell. The memory cell has a switching transistor provided on the substrate and a charge storage element in a trench made in the insulating layer. The charge storage element has a bottom electrode, a dielectric layer and a top electrode deposited one on another in the order mentioned.

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