Salient integration mode active pixel sensor

Details Salient integration mode active pixel sensor Salient integration mode active pixel sensor

1997-12-03

1999-09-14

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257448, 250206, H01L 2714, H01L 3100

Patent

active

059526866

ABSTRACT:
A salient integration mode active pixel sensor. The active pixel sensor includes an amplify/compare transistor which has a threshold voltage. The amplify/compare transistor couples an input of the amplify/compare transistor to an output of the amplify/compare transistor when the input of the amplify/compare transistor exceeds the threshold voltage. A photo-diode generates a signal voltage which has a voltage level dependent upon the intensity of light received by the photo-diode. The signal voltage is coupled to the input of the amplify/compare transistor. A reset element couples a reset line to the photo-diode and discharges the photo-diode when the reset line is active. A coupling capacitor for couples a select line to the input of the amplify/compare transistor. The select line causes the input to the amplify/compare transistor to exceed the threshold voltage and thereby couple the signal voltage to the output of the amplify/compare transistor. The amplify/compare transistor can be an N-type MOSFET and the reset transistor can be an N-type MOSFET. Further, a back gate of the amplify/compare transistor is generally connected to a circuit ground.

REFERENCES:
patent: 5307169 (1994-04-01), Nagasaki et al.
patent: 5408113 (1995-04-01), Kanno et al.
patent: 5587596 (1996-12-01), Chi et al.
patent: 5608243 (1997-03-01), Chi et al.

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