Semiconductor substrate and method for straightening warp of sem

Details Semiconductor substrate and method for straightening warp of sem Semiconductor substrate and method for straightening warp of sem

1997-10-16

1999-09-14

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257622, H01L 310312

Patent

active

059526793

ABSTRACT:
A plurality of grooves are formed in a SiC substrate consisting of an n.sup.- -type epitaxial layer and a p-type epitaxial layer layered on the surface of an n.sup.+ -type monocrystalline SiC semiconductor substrate. These grooves are formed in a grid on the SiC substrate. Heat treatment is then carried out to straighten warp of the SiC substrate caused by the growth of the epitaxial layers.

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Silicon Carbide and Related Materials Proceedings of the Fifth Conference 1-3 Nov. 1993, Washington, DC. USA, Institute of Physics Conference Series Number 137, Institute of Physics Publishing, Bristol and Philadelphia, pp. 54-58.

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