4. Single-crystal, oriented-crystal, and epitaxy growth processes;
  5. Forming from vapor or gaseous state
  6. Including change in a growth-influencing parameter

Eiji Kitaoka

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Method of producing single-crystal silicon carbide

Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – Including change in a growth-influencing parameter
Patent

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Semiconductor substrate and method for straightening warp of sem

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent

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Profile ID: LFUS-PAI-P-1338862

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