Semiconductor device having a capacitor

Details Semiconductor device having a capacitor Semiconductor device having a capacitor

1995-05-26

1996-01-23

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257297, 257298, H01L 2708, H01L 2976, H01L 2994, H01L 31119

Patent

active

054867134

ABSTRACT:
A semiconductor device having a capacitor includes a substrate, an insulating film formed on a surface of the substrate, a lower electrode formed on said insulating film, the lower electrode including a metal film the oxide of which is conductive, a dielectric film formed on said lower electrode, a sidewall spacer formed on sidewalls of said lower electrode and said dielectric film, the sidewall spacer being made of a dielectric material having a dielectric constant lower than the dielectric constant of said dielectric film, and an upper electrode formed on said dielectric film and the sidewall spacer.

REFERENCES:
patent: 4423087 (1983-12-01), Howard et al.
patent: 4982309 (1991-01-01), Shepherd
patent: 5189503 (1993-02-01), Suguro et al.
Ohta et al, IEEE Trans on Ed, . . . High Cap Ram Using Ta O . . . `, vol. ED-29 No. 3, 3 Mar. 1982, pp. 368-376.

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