Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-06-14
1997-06-24
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257361, 257362, H01L 2978, H01L 2702, H01L 2972
Patent
active
056419813
ABSTRACT:
A semiconductor apparatus connected between a signal input line and a grounding line is formed on a semiconductor substrate with a protection circuit connected between the signal input line and the grounding line, in parallel with the semiconductor apparatus. The protection circuit is formed, for example, of bipolar transistors, diodes, or MOS transistors. The protection circuit is designed to prevent an excess signal supplied on the signal line from damaging the semiconductor apparatus, such as by breaking down a dielectric layer formed at a gate of a MOS transistor. The protection circuit may further be connected to a potential line that is connected to an external source of voltage.
REFERENCES:
patent: 3512058 (1970-05-01), Khajezadeh et al.
patent: 4858055 (1989-08-01), Okitaka
patent: 5001529 (1991-03-01), Ohshima et al.
Hibi Hiroshi
Isono Hideto
Kananen Ronald P.
Ngo Ngan V.
Sony Corporation
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