Method for measuring gate insulation layer thickness

Details Method for measuring gate insulation layer thickness Method for measuring gate insulation layer thickness

1995-07-26

1996-10-01

Nguyen, Vinh P.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

324769, G01R 3122

Patent

active

055613870

ABSTRACT:
The thickness of the gate insulation layer in an FET has been measured by relating it to its Fowler-Nordheim tunneling field. This Fowler-Nordheim tunneling field is measured in-situ and is non-destructive. Details of the method and apparatus are given.

REFERENCES:
patent: 3919711 (1975-11-01), Chou
patent: 4257056 (1981-03-01), Shum
patent: 4382229 (1983-05-01), Cottrell et al.
patent: 4503519 (1985-03-01), Arakawa
patent: 5412608 (1995-05-01), Oyama

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