Protection device for a CMOS integrated circuit apparatus

Details Protection device for a CMOS integrated circuit apparatus Protection device for a CMOS integrated circuit apparatus

1994-12-27

1996-10-01

Tran, Minhloan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257358, 257360, 257363, 257408, H01L 2362, H01L 2976

Patent

active

055613128

ABSTRACT:
A CMOS integrated circuit apparatus has CMOS transistors having an LDD structure. A MOS transistor of a single drain structure for withstanding voltage and a jumper diode for withstanding voltage and latch up prevention are formed in parallel with each other between a power terminal and a ground terminal of the CMOS integrated circuit apparatus.

REFERENCES:
patent: 5270565 (1993-12-01), Lee et al.

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